dfnwb2*2-6l-a plastic-encapsulate mosfets CJMPD08 p-channel power mosfet general description the CJMPD08 uses advanced trenc h technology and design to provide excellent r ds(on) with low gate charge. this device is suitable for use in dc-dc conversion applications. feature z low profile for easy fit in thin environments z bidirectional current folw wi th common source configuration applications z optimized for battery and load management applications in portable equipment z li-ion battery charging and protection circuits z high power management in portable , battery powered products z high side load switch marking: tape drawing (unit : mm) maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current(note1a) i d -3.6 a power dissipation (note1a) p d 1.4 w power dissipation (note1b) p d 0.7 w thermal resistance from junction to ambient (note1a) r ja 86 /w dfnwb2*2-6l- a front back 1 of 3 sales@zpsemi.com www.zpsemi.com CJMPD08
thermal resistance from junction to ambient (note1b) r ja 173 /w thermal resistance from junction to ambient (note1c) r ja 69 /w thermal resistance from junction to ambient (note1d) r ja 151 /w junction temperature t j 150 storage temperature t stg -55 ~+150 notes:1. r ja is determined with the device mounted on a 1.5 x 1.5 in. pcb of fr-4 material. (a) when mounted on a 1 in 2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick pcb. for single operation. (b) when mounted on a minimum pad of 2 oz copper. for single operation. (c) when mounted on a 1 in 2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick pcb. for dual operation. (d) when mounted on a minimum pad of 2 oz copper. for dual operation. electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit on/off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -20 gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -1 v gate-body leakage current i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =-16v, v gs =0v -1 a v gs =-4.5v, i d =-3.6a 60 v gs =-2.5v, i d =-3a 80 v gs =-1.8v, i d =-2a 110 drain-source on-state resistance (note 2) r ds(on) v gs =-1.5v, id =-1a 170 m ? forward transconductance (note 2) g fs v ds =-10v, i d =-2.7a 5.5 s charges , capacitances and gate resistance(note3) input capacitance c iss 480 output capacitance c oss 46 reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 10 pf total gate charge q g 7.2 gate-source charge q gs 2.2 gate-drain charge q gd v ds =-4.5v,v gs =-6v,i d =-2.8a 1.2 nc switching times (note3) turn-on delay time t d (on) 38 rise time t r 25 turn-off delay time t d(off) 43 fall time t f v ds =-6v, i d =-2.8a, v gs =-4.5v,r g =6 ? 5 ns source-drain diode characteristics forward on voltage (note2) v sd v gs =0v, i s =-1a -0.8 v notes: 2. pulse test : pulse width 300s, duty cycle 2 %. 3. these parameters have no way to verify. 2 of 3 sales@zpsemi.com www.zpsemi.com CJMPD08
0123 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 -0 -1 -2 -3 -4 -0 -1 -2 -3 -4 -5 012345 0 20 40 60 80 100 02468 0 100 200 300 400 500 ta=25 o c pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) ta=25 o c pulsed 5 v sd i s ?? source current i s (a) source to drain voltage v sd (v) v gs =-2.4v,-2.2v,-2v,-1.8v,-1.6v v gs =-1.4v v gs =-1.2v v gs =-1.0v output characteristics drain current i d (a) drain to source voltage v ds (v) ta=25 o c pulsed v gs =-1.8v v gs =-2.5v v gs =-4.5v on-resistance r ds(on) (m ) drain current i d (a) i d r ds(on) ?? ta=25 o c pulsed i d =-2.1a v gs r ds(on) ?? on-resistance r ds(on) (m ) gate to source voltage v gs (v) 3 of 3 sales@zpsemi.com www.zpsemi.com CJMPD08 c,jun,2013
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